101. A. Moshfegh and A. Ignatiev, "Photo-Enhanced Catalysis: The Methanation Reaction," J. Vac. Sci. Technol. A5, 820 (1987).

102. R. Meng, Y. Wang, C. Liu, A. Bensaoula, C. Chu, P. Hor and A. Ignatiev, "Study of He-Enhancement in Co-Modified gFe2O3 Films," AIP Proc. 31st Annual MMM Conf. (1987).

103. E. Grossman, A. Be103. E. Grossman, A. Bensaoula and A. Ignatiev, "XeF2 Dry Etching of W(100) Induced Binding Energy Shifts: An XPS Study Surface Science 201, 269 (1988).

104. E. Ekwelundu and A. Ignatiev, "Electron Stimulated Desorption from GaAs(100) Surface", J. Vac. Sci. and Technol. A6(1), 51 (1988).

105. E. Grossman. A. Bensaoula and A. Ignatiev, "An XPS Study of XeF2 Dry Etching of Tungsten Silicide", Surface Science 197, 99 (1988).

106. A. Bensaoula, E. Grössman and A. Ignatiev, "Etching of Tungsten with XeF2: An X-ray Photo-electron Spectroscopy Study", J. Appl. Phys. 62, 4587 (1987).

107. E. Ekwelundu and A. Ignatiev, "Electron-Stimulated Desorption of O+ ions from a Gas Covered Cds(0001) Surface", Phys. Rev. B38, 3671 (1988).

108. W. C. Fan and A. Ignatiev, " Growth of an Orientationally Ordered Incommensurate Potassium Overlayer and Its Order-disorder Transition on the Cu(111) Surface", Phys. Rev. B37, 5274 (1988).

109. W. C. Fan and A. Ignatiev, "Phase Transition and Phase Diagrams of K and Cs Overlayers on a Reconstructed and Unreconstructed Cu(110) Surface", Phys. Rev. B38, 366 (1988).

110. E. Ekwelundu and A. Ignatiev", Photodesorption from CdS(0001) exposed to NO and Co", J. Vac. Sci. Technol. A6, 735(1988).

111. W. C. Fan and A. Ignatiev, "Ordered Phases and Phase Transitions of Cesium on the Cu(111) Surface", J. Vac. Sci. Technol. A6(3), 1986 (1988).

112. W. C. Fan, J. Strozier and A. Ignatiev, "Island Formation of Alumina on the Graphite (0001) Surface: LEED and AES Study Surface Science 195, 226 (1988).

113. A. Z. Moshfegh and A. Ignatiev, "Combined high-pressure photocatalytic reactor - UHV system and sample transfer device", Rev. of Sci. Inst. 59, 2702 (1988).

114. E. C. Ekwelundu and A. Ignatiev, "Electron Stimulated Desorption of Positive Ions from an Adsorbate-Covered Si(100) Surface", Surface Science 215, 91 (1989).

115. A. Mesarwi and A. Ignatiev, "Photodesorption from Stainless Steel", J. Vac. Sci. Technol. A6, 942 (1988).

116. A. Moshfegh and A. Ignatiev, "Photo-Enhancement of the Catalytic Methanation Reaction," Energy 12, 277 (1987).

117. W. C. Fan and A. Ignatiev, "Phase Diagrams of K and Cs on Cu(110) and Cu(111) Surfaces", Langmiur, 5, 582 (1989).

118. W. C. Fan and A. Ignatiev, "Order-Disorder Critical Behavior of Orientationally Ordered Incommensurate Overlayers of Cesium and Potassium on the Cu(111) Surface", Phys. Rev., B39, 10 (1989).

119. Z. P. Hu, Jia Li, N. J. Wu and A. Ignatiev, "C(0001)-(_3x_3)R30°-Cs Structure Determination: R-Factor Analysis", Surf. Sci., 218, 283-92 (1989).

120. Z. P. Hu, Jia Li, N. J. Wu and A. Ignatiev, "Surface Structure of the C(0001)-(2x2) Cs System: LEED Dynamical Calculation", Physical Review, B39, 18 (1989).

121. N.M. Nahar, G. H. Mo and A. Ignatiev, "Development of an Al2O3-Co Selective Absorber for Solar Collectors", Thin Sol. Films 172, 19-25 (1989).

122. N.M. Nahar, G.H. Mo and A. Ignatiev, "A Spectrally Selective High Temperature Stable Al2O3-Co Solar Absorber Coating", Solar Energy Mat. 14, 129 (1986).

123. K. Jamison, A. Bensaoula, A. Ignatiev and W. S. Chan, "Epitaxial Growth of InSb(111) on Sapphire (0001)", Appl. Phys. Lett 54, 19 (1989).

124. A. Ignatiev," Surface Physics- Materials Science Research Possibilities on a Lunar Base", AIP Conf. Proc. 202, 85 (1989)

125. A. Ignatiev, "Epitaxial Thin-Film Crystal Growth in Space Ultra-Vacuum", Adv. Mat. & Mfg.. Processes, 3(4), 599-615 (1988).

126. A. Ignatiev and C.W. Chu, "A Proposal for Epitaxial Thin Film Growth in Outer Space", Metal. Trans. A., 19A, 2639 (1988).

127. A. Ignatiev and C. W. Chu, "Commercial Aspects of Epitaxial Thin Film Growth in Outer Space", Proc. 25th Space Congress (Coco Beach, 1991).

128. J. A. Schultz, H. Schmidt, L. Anderson P. Murray, A. Ignatiev and G. Rau, "Rapid and Quantitative Direct Recoil Analysis of of H, C, O, Si, Ga and As Surface Structure During Reaction of Methanol with GaAs(100)", J. Vac. Si. Technol. (1988).

129. A. Bensaoula, K. D. Jamison, H. C. Chen and A. Ignatiev, "The Influence of Sb Doping on the Growth and Electronic Properties of GaAs(100) and AlGaAs(100)", Matl. Res. Soc. Symp. Proc., 144 , 85 (1989).

130. J.A. Schultz, H. Schmidt, A. Ignatiez and P.T. Murray, "Surface Analysis of H, C, O, Y, Ba and Cu in Pressed and Laser Evaporated YBCO", J. Vac. Sci. Technol, (1991).
131. A. Mesarwi and A. Ignatiev, " Laser-Enhanced Oxidation of Nickel", J. Vac. Sci. Technol. A7(3), 1754 (1989).

132. W. C. Fan, A. Ignatiev, H. Huang and S. Y. Tong, "Observation and Structural Determination of R 30° Reconstruction of the Si(111) Surface" Phys. Rev. Lett., 62, 1516 (1989).

133. W. C. Fan, N. J. Wu and A. Ignatiev, "Observation of Ordered Structures of Sr on the Si(100) Surface", Phys. Rev. B42, 1254 (1990).

134. A.Z. Moshfegh and A. Ignatiev, "Photo-enhanced Catalytic Decomposition of Isopropanol on V2O5", Catalysis Letters 4, 113-122 (1990).

135. K. D. Jamison, A. Bensaoula, H-D Shih and A. Ignatiev, "Electrical and Structural Properties of InSb (111) Epitaxially Grown on Al2O3(0001)", Vacuum (in print 1991).

136. A. Mesarwi and A. Ignatiev, "Photoenhanced Oxidation of Stainless Steels: An Auger Electron Spectroscopy, X-Ray Photoelectron Spectroscopy and Scanning Electron Microscopy Study", Thin Solid Films, 189, 347 (1990).

137. W. C. Fan, A. Ignatiev and N-J Wu, "Growth of Bismuth on the Si(100) Surface: AES, and LEED, Study", Surf. Sci., 235, 169 (1990).

138. K. D. Jamison, J. S. Resh, C. C. Horton, A. Bensaoula and A. Ignatiev, "Interesting Aspects of Reflection High-energy Electron Diffraction Oscillations during Growth of GaAs(100)", J. Vac. Sci. Technol. B8, 2, (1990).

139. W. C. Fan and A. Ignatiev, "Metal-adsorbate-induced Si(111)-(1x3) Reconstruction", Phys. Rev. B41, 3592 (1990).

140. J. S. Resh, K.D. Jamison, J. Strozier and A. Ignatiev, "Multiple reflection high-energy electron diffraction beam intensity measurement system", Rev. Sci. Instrum. 61, 2 (1990).

141. A. Mesarwi, W. C. Fan and A. Ignatiev, "Oxidation of the Si(100) Surface Promoted by Sr Overlayer: An XPS Study", Jour. of App. Phys., 68, 3609 (1990).

142. E. A. Bering III and A. Ignatiev, "Particle Radiation Near the Orbit of the Vacuum Wake Shield", J. Spacecraft, 27, 1 (1989).

143. J. Resh, K. D. Jamison, J. Strozier, A. Bensaoula and A. Ignatiev, "Phase of Reflection High-energy Electron-diffraction Intensity Oscillations During Molecular-Beam-Epitaxy Growth of GaAs(100)", Phys. Rev. B40, 17 (1989).

144. W. C. Fan and A. Ignatiev, "Reconstruction of the Clean and Metal-adsorbed Ge(111) Surface", Phys. Rev. B40, 5479 (1989).

145. Z. P. Hu, B. C. Pan, W. C. Fan and A. Ignatiev, "Structure Analysis of the Cu(110)-(1x2) Surface Reconstruction induced by Alkali-metal Adsorption", Phys. Rev. B41, 9692 (1990).

146. W. C. Fan, A. Mesarwi and A. Ignatiev, "The Effect of Surface Roughness on RHEED Rocking Curves and Impact on RHEED Intensity Oscillations", Journ. Vac. Sci. and Tech., A8, 347(1990).

147. W.C. Fan, and A. Ignatiev, "Adsorption of Ba on the GaAs (110) Surface and its Effect on Surface Oxidation", J. Appl. Phys., 70, 2833 (1991).

148. W. C. Fan, and A. Ignatiev, "The Effect of Sr and Bi on the Si(100) Surface Oxidation: AES, LEED and XPS Study", Journ. Vac. Sci. and Tech. A,A8, 4017 (1990).

149. N. J. Wu, Z. P. Hu, and A. Ignatiev, "Orientational Ordering of a Cesium Monolayer on Graphite", submitted to Phys. Rev. B43, 3805 (1991).

150. A. Moshfegh, and A. Ignatiev, "Formation and Characterization of Thin Film Vanadium Oxides: AES, WPS, XRD, SEM, and Optical Reflectance Studies", Thin Solid Films 190, 251 (1991).

151. J. Resh, K. Jamison, J. Strozier, A. Bensaoula, and A. Ignatiev, "Phase of Reflection High-energy Electron-diffraction Intensity Oscillations During Molecular Beam Epitaxy Growth of GaAS (100)", Phys. Rev. B.,40, 11799 (1989).

152. A. Mesarwi, and A. Ignatiev, "X-Ray Photoemission Study of Y-Promoted Oxidation of the Si(100) Surface", Surf. Sci., 244, 15 (1991).

153. W. C. Fan, and A. Ignatiev, "The Effect of Surface Roughness on Reflection High-energy Electron -diffraction Rocking Curves and Impact on RHEED Oscillations", J. Vac. Sci. Technol., A8, 3479 (1990).

154. A. Mesarwi and A. Ignatiev, "X-ray Photoemission Study of the Ba/Si(100) Interface and the Oxidation of Si Promoted by Ba Overlayers", J. Vac. Sci Technol., A-9, 2264 (1991).

155. J. Wosik, T. Robin, M. Davis, J. Wolfe, K. Forster, S. Deshmukh, A. Bensaoula, R. Sega, D. Economu, A. Ignatiev, "Dependence of Millimeter Wave Surface Resistance on the Deposition Parameters of Laser Ablated YBaCuO Thin Films" Proc. 2nd Conf. Sci, Technol. Thin Film Superconductors (Denver) (1990).

156. A. Moshfegh, Y.Q. Wang,Y. Y. Sun, P. Hor and A. Ignatiev, "Co-deposited Thin FIlm of YBaCuO-Ag", Physica C, 218, 396 (1993).

157. W.C. Fan, N.-J. Wu and A. Ignatiev, "Determination of Bi-Induced (1x1) Reconstruction of the Si(100) Surface, Phys. Rev. B 45, 1416F (1992).

158. W. C. Fan and A. Ignatiev, "The Effect of Ba or The Oxidation of the Si(100) Surface, "Phys. Rev. B 44, 3110 (1991).

159. K. Krishen and A. Ignatiev, "Future Superconductivity Applications in Space: A Review". Proceedings: First World Congress on Superconductivity (Houston), (1988).

160. W. C. Fan and A. Ignatiev, "Identification Ordered Atomic Structure of Ba on the Si(100) Surface", Surface Science 253, 297 (1991).

161. W. C. Fan, A. Ignatiev and B. Hu, "Ordered-Disordered Critical Behavior of Orientationally Ordered Incommensurate Overlays of Cs and K on the Cu(111) Surface", Phys. Rev. B39, 6816 (1989).

162. A. Bensaoula, H. Hansen, H. C. Chen, J. Zborowski, K. Jamison, A. Ignatiev and H. D. Shih, "A RHEED and XPS Study of InGaAs on GaAs Grown by CBE; J. Crystal Growth 105, 227 (1990).

163. A. Ignatiev, H.D. Shih, M. Daniels, R. Sega and T. Bonner, "Space Vacuum Processing", 29th Aerospace Science Meeting, 91-0310 (1991).

164. A. Moshfegh and A. Ignatiev, "A Temperature Programmed Desorption Study of the H2O/V2O5 System", Surface Sci. Letters, 275, L650 (1992).

165. H. Hansen, A. Bensaoula,S. Tougard, J. Zborowski and A. Ignatiev, "The Temperature Dependent Variation of Bulk and Surface-Stoichiometry of InGaAs on GaAs Grown by CBE and Studied by RHEED, XPS and XRD", Jour. Crystal Growth 116, 271 (1992).

166. T. Robin, A. Mesarwi, N.-J. Wu, W. C. Fan, L. Espoir, R. Sega and A. Ignatiev, "YBCuO Growth on Thin Y-Enhanced SiO2 Buffer Layers on Silicon", Applied Phys. Letters 59, 2323(1991).

167. R. M. Sega and A. Ignatiev, "A Space Ultra-vacuum Experiment - Application to Material Processing", Proc. Joint AIAA - IKI Conf. on Space Processing, (Moscow,1991).

168. A. Mesarwi, L. L. Levinson and A. Ignatiev; "Oxygen Desorption from YBCO and BCSCO Superconductors", J. Appl. Phys. 70, 1591 (1991).

169. A. Mesarwi and A. Ignatiev, "Oxygen-induced Al Surface Segregation in AlGaAs and the Effect of Y Overlayers on the Oxidation of the Y / AlGaAs Interface", J. Appl. Phys., 71, 1943 (1992).

170. N. J. Wu, A. Ignatiev, M. Hartig, A. Mesarwi, H. D. Shih, "Growth and Characterization of Pb(Zr,Ti)O3 Thin Films on Si(100) and on Yttrium-treated Si(100)," Proc. of the Fourth International Symp. on Integrated Ferroelectrics, pp 392 (1992).

171. A. Mesarwi, N. J. Wu, H. Fredricksen, A. Ignatiev, "Thin Barrier Technology for the Integration of YBa2Cu3O7-x Thin Films to Semiconductors", Proc. of the MRS Spring Meeting, Symp. San Francisco, California, (April 28-May 1, 1992).

172. A. Ignatiev, "Industry Impact of Thin Film Electronic Materials Growth in Space", Proc. 4th Internat'l Conference on Commercial Use of Space, pp231 (Gordon & Breach, Montreaux) 1992.

173. N. J. Wu, A. Ignatiev, A. Mesarwi, "PZT Thin Film Growth on Yttrium-treated Si(100)", submitted to Integrated Ferroelctrics, 3, 139 (1993).

174. N. J. Wu, A. Ignatiev, A. Mesarwi, H. Lin, H.D. Shih, "Heterostructures of Pb(ZrxTi1-x)O3 and YBa2Cu3O7-x on MgO substrates prepared by Pulsed Laser Ablation", submitted to, Jpn. Jour. Appl. Phys., 32, 5019 (1993).

175. S. L. Bud'ko, H. H. Feng, M. F. Davis, J. C. Wolfe, N. J. Wu, A. Ignatiev and P. H. Hor, "Temperature dependence of persistent photoconductivity in oxygen deficient YBa2Cu3O7-x Thin Films," Phys. Rev. B (1995).

176. A. Ignatiev and A. Freundlich, "Solar Cells for Lunar Applications by Vacuum Evaporation of Lunar Regolith Materials", Proc. 43 Congress of Internat'l Astro. Federation, IAA 92-0158 (1992).

177. A. Mesarwi and A. Ignatiev, "Interaction of Y Overlayers with the GaAs (100) Surface and Oxidation of the Y/GaAs Interface", Surf. Sci. 282, 371 (1993).

178. J. Strozier, Y.A. Zhang, C. Horton, A. Ignatiev and H. D. Shih, "Effect of Disorder on the Optical Properties of short Period Superlattices", Appl. Phys. Lett. 62, 3426 (1993).

179. J. Strozier, Y. A. Zhang, C. Horton, A. Ignatiev and H.D. Shih, "Model Calculations of Optical Properties for Disordered GaAs/AlAs Superlattices", J.Vac. Sci. Technol, A11, 923 (1993).

180. W.C. Fan and A. Ignatiev, "Reconstruction of the Si(111) Surface Induced by Alkali Metal Atoms", Surface Sci. 276, 352 (1992).

181. R. Y.A. Zhang, J. Strozier, C Horton, and A. Ignatiev, "Luminescence Properties of Periodic Disordered Thin Layer GaAs/AlAs Superlattices", Mat. Res. Soc. Symp. Proc., 358, 999 (1995).

182. T. C. Zhao, S. Y. Tong and A. Ignatiev, "Determination of Linear-chain Multiple Bound State Resonances in Reflection High-Energy Electron Diffraction", Surf. Rev. and Letters, 1, 261 (1994).

183. T. C. Zhao, A. Ignatiev, and S. Y. Tong, "Dynamical Effects in Reflection High-Energy Electron Diffraction Intensity Oscillations", Surf. Rev. and Letters, 1, 253 (1994).

184. C. Justiz, R. Sega, C. Dalton, and A. Ignatiev, "Return Flux Contamination of an Outgassing Spacecraft in Low Earth Orbit", Proc. 31st AIAA Aeorspace Sciences Meeting, 93-0725, (1993).

185. W. T. Taferner, A. Freundlich, A. Bensaoula, A. Ignatiev, K. Waters, K. Eipers-Smith, M. Guehenneuc, and J.A. Schultz, "Real Time Observation of Ge(001) and Ge/Si(001) Using Low Energy Ion Scattering", J. Vac. Sci. Technol. (1994).

186 C. Justiz, R. Sega, C. Dalton and A. Ignatiev, DSMC- and BGK-based Calculations for Return Flux Contamination of Outgassing Spacecraft", J. Thermophysics, 8, 802 (1994).

187. N. J. Wu, H. Lin, K. Xie, X. Y. Li, A. Ignatiev, "A comparison study of (100) and (110) Ba0.5Sr0.5TiO3 epitaxial thin films grown on Superconducting YBa2Cu3O7-x Thin Film Substrates," Phys. C 232, 151 (1994).

186. N. J. Wu, H. Lin, K. Xie, X. Y. Li, J. Li, A. Ignatiev, "Study of Ba1-xSrxTiO3(100) epitaxial thin films prepared by laser deposition," Proc. of the 9th IEEE Intl. Symp. on the Applications of Ferroelectrics, 7-10 Aug. 1994, University Park, Pennsylvania, P. 464.

188. H. Fredricksen, D. Ritums, N. J. Wu, X. Y. Li, A. Ignatiev, "High transition temperature superconducting surface acoustic wave devices," Appl. Phys. Lett. 64, 3033 (1994).

190. J. Feller, M. Levy, B. K. Sarma, H. Fredricksen, D. Ritums, N. J. Wu, X. Y. Li, A Ignatiev, "High Tc SAW devices and measurements near the superconducting transition," IEEE Intl. Ultrasonics Symp., (Cannes, France, Nov. 1-4, 1994).

191. H. Lin, N. J. Wu, K. Xie, X. Y. Li, A. Ignatiev, "Ferroelectric switching and fatigue behavior for PZT/YBCO thin film heterostructures," Integrated Ferroelectrics, Integrated Ferroelectrics 5, 3033 (1994).

192. N. J. Wu, H. Lin, K. Xie, A. Ignatiev, "PZT/YBCO integration and characterization of a three terminal device," Ferroelectrics, 156, 73(1994).

193. He Lin, N. J. Wu, K. Xie, X. Y. Li, A. Ignatiev, "The Transient behavior and memory effect of a PZT/YBCO three terminal device," Appl. Phys. Lett. 65, 953 (1994).

194. Q. Zhong, P.C. Chou, Q.L. Li G.S. Taraldsen, A. Ignatiev, "High-rate growth of purely a-axis oriented YBCO high-Tc thin films by photo-assisted MOCVD," Phsica C, 246, 288 (1995).

195. H. Lin, N. J. Wu, F. Geiger, K. Xie, A. Ignatiev, "Photoresponse and fast optical read-out for a PbZrxTi1-xO3/YBa2Cu3O7-x thin film heterostructure capacitor," Appl. Phys. Lett., 66, 1172 (1995).

196. X. Y. Li, N. J. Wu, K. Xie, J. S. Liu, H. Lin, T. Q. Hung and A. Ignatiev, "The effect of YBa2Cu3O7-x target on superconductive properties of laser ablation deposited thin films," Physica C, 248, 281 (1995).

197. Q. Zhong, P.C. Chou, Q.L. Li and A. Ignatiev, "A'Jc expectation rule' for YBCO thin film prepared by MOCVD and laser ablation," Modern Physics Lett. B8, 1367 (1994).

198. P.C. Chou, Q. Zhong, Q.L. Li and A. Ignatiev, "Optimization of Jc for photo-assisted MOCVD prepared YBCO thin films by Robust design," Mat. Res. Sypm. Proc. 335, 279 (1994).

199.

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