Field emitter as a source of electrons and method for making are
provided. The emitter is formed by growth of a nitride compound of a group
III element or alloys of group III elements on a substrate having a lattice
mismatch with the thin film. The lattice mismatch causes columnar growth in
the film. The micro columns have tips, thus forming an array of crystalline
microtips of the low work function nitride material. The nitride compound is
doped during growth. Gallium nitride grown on (111) silicon and doped with
silicon produces a surface having low threshold electric field for emission
and high current per unit area.
Inventors:
Berishev, Igor (Houston, TX)
Bensaoula, Abdelhak (Houston, TX)
