United States Patent 6,054,333
Real time etch measurements and control using isotopes

Bensaoula
25 April 2000
Full text at USPTO

Abstract

pat-6054333-fig-w450h325 (3K)
A method is provided for determining etching characteristics during gas phase etching of thin film materials such as semiconductors during manufacture of devices. Etch end point, rate of etching, uniformity of etching and uniformity of growth of thin films can be determined. Isotopically enriched materials are deposited in layers which may be only a few nanometers thick at selected locations during growth of the thin films. The isotopes are removed during gas phase etching, carried by gas into an analysis chamber, condensed on a surface, and analyzed for isotopical composition. Mass spectroscopy of recoiled ions is a preferred detection technique.

Inventors:
Bensaoula, Abdelhak (Houston, TX)

Assignee:
University of Houston (Houston, TX)

Appl. No.:
950344

Filed:
14 Oct 1997