Modern day computers require large amounts of data to operate. In fact, their sole purpose is to compute and store large amounts of data. Today's DRAM technologies are nearing their limit in densities and speeds requiring new architectures in order to meet the growing demands of today's faster processors. Additionally, their volatile nature increases wait time as data can not be stored permanently, it must be continually swapped back and forth to slower storage devices.
The development of Magnetic Tunnel Junctions offer a new possibility in the construction of RAM using magnetic materials as opposed to capacitors. Magnetic Random Access Memory offers the speed of SRAM, the density of DRAM, and the non-volatitlity of FLASH memory.
Although the theory of MTJs has existed for several decades several challenges remain to be overcome to develop a working MRAM model. Magnetic stability to preserve data integrity must be examined. Furthermore, as MTJ dimensions decrease the resistance increases requiring more power to switch bits. Lastly, the speed of magnetic switching determins how fast data can be written into MRAM.